Figure shows an amplifier using an NMOS transistor. Assume that the transistor is in saturation with device parameters, $\mu_{n} C_{o x}=250 \mu \mathrm{A} / \mathrm{V}^{2}$, threshold voltage $\mathrm{VT}_{\mathrm{T}}=0.65 \mathrm{~V}$ and $\mathrm{W} / \mathrm{L}=4$. Ignore the channel length modulation effect. The drain current of the transistor at the operating point is $\mu \mathrm{A}$ (rounded off to nearest integer).